In this program, innovative radiation detectors using new semiconductor technology Silicon-On-Insulator (SOI) are being developed. They will open up the new frontiers of particle and nuclear physics, astrophysics, material and life science with quantum beam imaging. The SOI multi layer wafer technology enables us to realize a 3D sensor where sensor layer and read out electronics layer are bonded in a true monolithic way. The effective combination of those two active layers can come up with various new functional devices which should be effective to enhance the quantum beam imaging technology with visible and IR light, X-ray, electron and other charged beam.
The researchers who have a strong interest in developing innovative SOI sensors and those who need any breakthrough in their imaging devices for further studies collaborate in this new program to establish new research field of quantum imaging.